DocumentCode :
3113353
Title :
Modeling of implanted ion distribution in AIIIBV semiconductors
Author :
Didenko, S.I. ; Koltsov, G.I. ; Khodyrev, V.A. ; Yurchuk, S.Y.
Author_Institution :
Steel & Alloys Inst., Moscow, Russia
fYear :
2000
fDate :
2000
Firstpage :
243
Lastpage :
246
Abstract :
The depth distribution of Be and Se atoms after the implantation and annealing processes into compounds AIIIBV have been determined using the SIMS technique. The results are compared with the respective computer simulation
Keywords :
III-V semiconductors; annealing; boron; doping profiles; gallium arsenide; gallium compounds; indium compounds; ion implantation; mass spectroscopic chemical analysis; secondary ion mass spectra; selenium; semiconductor doping; AIIIBV semiconductors; B depth distribution; GaAs:Be; GaAs:Se; GaP:Be; GaP:Se; InAs:Be; InAs:Se; InP:Be; InP:Se; SIMS technique; Se depth distribution; annealing processes; computer simulation; implanted ion distribution; modeling; Annealing; Atomic measurements; Computer simulation; Energy loss; Fabrication; Gallium arsenide; Hydrogen; Ion implantation; Protection; Semiconductor devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
Type :
conf
DOI :
10.1109/.2000.924135
Filename :
924135
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3113353
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