Title :
Low driving voltage spatial light modulator fabricated by ultrahigh-purity GaAs
Author :
Kayastha, Madhu Sudan ; Matsunami, Ikuo ; Sapkota, Durga Parsad ; Takahashi, Makoto ; Wakita, Ken
Author_Institution :
Dept. of Electr. & Electron. Eng., Chubu Univ., Kasugai, Japan
fDate :
May 31 2010-June 4 2010
Abstract :
Highly efficient surface normal spatial light modulators (SLMs) using ultrahigh purity GaAs layers (30 μm thick) grown on (100) - oriented n+ - GaAs substrate by liquid phase epitaxy (LPE) method have been realized. The extinction ratio of 25 dB has been demonstrated with a low - driving voltage (32 V) at 895 nm, based on electroabsorption (EA) effect. Very large depletion length over 150 μm is confirmed by analyzing the extinction ratio and capacitance- voltage (C-V) measurements. The calculated value of impurity concentration is low (≈1012 cm-3) and indicates donor and accepter in the device are highly compensated.
Keywords :
III-V semiconductors; epitaxial growth; gallium arsenide; optical fabrication; spatial light modulators; GaAs; capacitance-voltage measurements; electroabsorption effect; liquid phase epitaxy method; low driving voltage spatial light modulator; size 30 mum; size 895 nm; ultrahigh purity layers; voltage 32 V; wavelength 150 mum; Capacitance measurement; Capacitance-voltage characteristics; Epitaxial growth; Extinction ratio; Gallium arsenide; Low voltage; Optical modulation; Phase modulation; Substrates; Voltage measurement;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516076
