Title :
Modeling the amorphization of Si due to the implantation of As, Ge, and Si
Author :
Stiebel, D. ; Burenkov, A. ; Pichler, P. ; Cristiano, E. ; Claverie, A. ; Ryssel, H.
Author_Institution :
Fraunhofer Inst. fur Integrierie Schaltungen, Erlangen, Germany
Abstract :
New experiments have been performed to measure the two-dimensional amorphous/crystalline (a/c)- interface after implantation of arsenic, germanium, and silicon atoms. The experimental results obtained were used to check the predictability of models describing the shape of amorphous areas after ion implantation. We show that the model considered in this paper which is based on Monte-Carlo (MC) simulations is in fact well suited to describe the a/c-interface. Differences between results from experiments and simulations were explained in part by the statistical nature of ion implantation
Keywords :
Monte Carlo methods; amorphisation; amorphous semiconductors; arsenic; elemental semiconductors; germanium; interface structure; ion implantation; semiconductor process modelling; silicon; As; Ge; Monte-Carlo simulation; Si; Si:Ge,As; a/c-interface; amorphization; amorphous areas; arsenic; germanium; ion implantation; silicon; two-dimensional amorphous/crystalline interface; Amorphous materials; Atomic measurements; Germanium; Ion implantation; MOSFETs; Performance evaluation; Predictive models; Rapid thermal processing; Shape; Silicon;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924137