• DocumentCode
    3113449
  • Title

    Role of buried oxide microstructure in dosimetry of implanted oxygen in SIMOX technology

  • Author

    Anc, M.J. ; Matthews, B. ; Dolan, R.P.

  • Author_Institution
    Ibis Technol. Corp., Danvers, MA, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    265
  • Lastpage
    268
  • Abstract
    In this paper, we present and discuss the role of the microstructure of the buried oxide of standard dose SIMOX in controlling of the accuracy and reproducibility of the implanted oxygen dose in SIMOX technology. Specific effects of implant process conditions on the buried oxide microstructure are shown. The discussion is supported by the data from large number of processes. Implications for low dose SIMOX manufacture are addressed
  • Keywords
    SIMOX; buried layers; crystal microstructure; dosimetry; elemental semiconductors; interface structure; ion implantation; silicon; silicon compounds; SIMOX technology; Si-SiO2; Si:O-SiO2; buried oxide microstructure; dosimetry; implant process conditions; implanted oxygen; implanted oxygen dose; low dose SIMOX manufacture; standard dose SIMOX; Annealing; Calibration; Current measurement; Dosimetry; Implants; Microstructure; Oxygen; Reproducibility of results; Silicon on insulator technology; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology, 2000. Conference on
  • Conference_Location
    Alpbach
  • Print_ISBN
    0-7803-6462-7
  • Type

    conf

  • DOI
    10.1109/.2000.924140
  • Filename
    924140
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3113449