Title :
SMART-CUT(R) technology for SOI: A new high volume application for ion implantation
Author :
Wittkower, Andrew ; Auberton-Herve, Andre ; Maleville, Christophe
Author_Institution :
Soitec USA Inc., Peabody, MA, USA
Abstract :
A high volume technology for forming Silicon-on Insulator (SOI) named Smart-Cut(R) is described. Its key feature is a hydrogen implant which irreversibly weakens the structure of the silicon crystal close to the Rp of implantation. This acts as an atomic level scalpel to lift off a thin layer of silicon which is transferred to a second wafer. Since this technology relies only on standard semiconductor manufacturing equipment, capacity increases and silicon market developments-such as 300 mm SOI wafer requirements-can be implemented with ease
Keywords :
elemental semiconductors; hydrogen; ion implantation; silicon; silicon compounds; silicon-on-insulator; 300 mm; SMART-CUT technology; SOI; Si:H-SiO2; atomic level scalpel; high volume application; hydrogen implant; ion implantation; lift off; silicon crystal; silicon on insulator; Annealing; Atomic layer deposition; Hydrogen; Implants; Ion implantation; Isolation technology; Rough surfaces; Silicon on insulator technology; Surface roughness; Wafer bonding;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924141
