DocumentCode
3113460
Title
Enhanced TE/TM electro-optic effect in vertically coupled InGaAs quantum dots
Author
Chuang, K.Y. ; Kuo, C.Y. ; Tzeng, T.E. ; Feng, David J Y ; Lay, T.S.
Author_Institution
Dept. of Photonics, Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fYear
2010
fDate
May 31 2010-June 4 2010
Firstpage
1
Lastpage
4
Abstract
We have investigated the electro-optic effect for the vertically coupled InGaAs quantum dots. In addition to large TE-polarized electro-optic coefficient, TM-polarized electro-optic effect is observed. The linear and quadratic electro-optic coefficients are larger than GaAs-base multiple quantum well structures.
Keywords
III-V semiconductors; electro-optical effects; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum dots; InGaAs; molecular beam epitaxial growth; multiple quantum well structures; quantum dots; transverse-electric-polarized electro-optic coefficient; transverse-magnetic-polarized electro-optic coefficient; Capacitive sensors; Fabry-Perot; Gallium arsenide; Gold; Indium gallium arsenide; Optical polarization; Potential well; Quantum dots; Substrates; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location
Kagawa
ISSN
1092-8669
Print_ISBN
978-1-4244-5919-3
Type
conf
DOI
10.1109/ICIPRM.2010.5516080
Filename
5516080
Link To Document