DocumentCode :
3113522
Title :
Integration of InP/InGaAs/InP p-i-n photodiodes on silicon via wafer bonding and hydrogen-induced layer exfoliation
Author :
Chen, Peng ; Wong, Ka Ming ; Lau, Kei May ; Lau, S.S.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
fYear :
2009
fDate :
13-17 July 2009
Firstpage :
1
Lastpage :
2
Abstract :
Functioning InP/InGaAs/InP p-i-n photodiodes, initially grown on an InP substrate, were transferred onto a SiO2/Si substrate using the combination of ion-cutting and selective chemical etching. Effects of hydrogen-induced defects on transferred devices are discussed.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; integrated optoelectronics; p-i-n photodiodes; wafer bonding; InP-InGaAs-InP; SiO2-Si; hydrogen-induced layer exfoliation; ion-cutting; p-i-n photodiodes; selective chemical etching; wafer bonding; Annealing; Etching; Hydrogen; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; PIN photodiodes; Silicon; Substrates; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-4102-0
Electronic_ISBN :
978-1-4244-4103-7
Type :
conf
DOI :
10.1109/OECC.2009.5214562
Filename :
5214562
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3113522
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