Instability study of partially depleted SOI-MOSFET due to floating body effect using high energy nuclear microprobes

Author

Abo, S. ; Mizutani, M. ; Nakayama, K. ; Takaoka, T. ; Iwamatsu, T. ; Yamaguchi, Y. ; Maegawa, S. ; Nishimura, T. ; Kinomura, A. ; Horino, Y. ; Takai, M.

Author_Institution

Res. Centre for Mater. Sci. at Extreme Conditions, Osaka Univ., Japan

fYear

2000

fDate

2000

Firstpage

285

Lastpage

288

Abstract

The instability of partially depleted SOI-MOSFETs due to floating body effects has been investigated using high energy nuclear microprobes. Transient SOI-MOSFET behavior during nuclear particle incidence has also been investigated using two types of three dimensional computer simulation. Suppression of the floating body effects was observed in SOI-MOSFETs with body contact electrodes by nuclear microprobe irradiation. The results of two computer simulators do not coincide each other

Keywords

MOSFET; digital simulation; elemental semiconductors; ion microprobe analysis; radiation hardening (electronics); semiconductor device measurement; semiconductor device models; silicon; silicon compounds; silicon-on-insulator; Si-SiO₂; body contact electrodes; computer simulators; floating body effect; high energy nuclear microprobes; instability study; nuclear microprobe irradiation; nuclear particle incidence; partially depleted SOI-MOSFET; three dimensional computer simulation; transient SOI-MOSFET behavior; Computational modeling; Computer simulation; Electrodes; Fabrication; Laboratories; MOSFET circuits; Materials science and technology; Metal-insulator structures; Power engineering and energy; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924145

Filename

924145