Title :
A plasma immersion ion implantation system for SOI wafer fabrication
Author :
Feng, L.M. ; Lamm, A.J. ; Liu, W. ; Garces, E. ; Chan, C. ; Current, M.I. ; Henley, F.J.
Author_Institution :
Silicon Genesis Corp., Campbell, CA, USA
Abstract :
Plasma immersion ion implantation (PIII) offers certain enabling advantages in several areas over a conventional beamline ion implanter: implant time independent of substrate size, lower costs, and higher dose rate. Silicon Genesis´ novel Protonic ModeTM technology achieves ion density exceeding 1012 cm-3, H+ /H2+ ion mass purity ratio at greater than 100:1, and is cluster-tool compatible. At ⩽5 kV implant potentials, SiGen´s PIII achieves average currents in excess of 150 mA, with an estimated hydrogen ion current of >50 mA
Keywords :
elemental semiconductors; ion implantation; plasma materials processing; silicon; silicon compounds; silicon-on-insulator; 150 mA; 5 kV; 50 mA; H+/H2+ ion mass purity ratio; PIII; Protonic Mode technology; SOI wafer fabrication; Si:O-SiO2; cluster-tool compatibility; cost; currents; dose rate; hydrogen ion current; implant potentials; implant time; ion density; plasma immersion ion implantation system; Doping; Fabrication; Implants; Plasma accelerators; Plasma applications; Plasma density; Plasma immersion ion implantation; Plasma sheaths; Plasma sources; Silicon on insulator technology;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924146
