Title :
Investigation of regrowth interface quality of AlGaInAs/InP buried heterostructure lasers
Author :
Takino, Yuta ; Shirao, Mizuki ; Sato, Takashi ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
fDate :
May 31 2010-June 4 2010
Abstract :
1.3-μm AlGaInAs/InP buried heterostructure lasers were prepared by a low-pressure organo-metallic vapor-phase-epitaxy with in-situ thermal cleaning. The regrowth interface quality dependence on thermal cleaning time has been investigated from their lasing properties as well as electroluminescence property below the threshold. As the results, under condition of PH3 atmosphere in the organo-metallic vapor-phase-epitaxy (OMVPE) reactor at a fixed temperature of 450 °C for 60 min cleaning time, successful operation with the internal quantum efficiency of around 81 % and the differential quantum efficiency of 63 % were obtained for the cavity length of 500 μm with cleaved facets.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor lasers; AlGaInAs-InP; buried heterostructure lasers; electroluminescence property; low-pressure organo-metallic vapor-phase-epitaxy; organo-metallic vapor-phase-epitaxy reactor; regrowth interface quality; temperature 450 C; thermal cleaning; time 60 min; wavelength 1.3 mum; wavelength 500 mum; Cleaning; Electrodes; Fiber lasers; Indium phosphide; Inductors; Optical device fabrication; Optical fiber communication; Power generation; Quantum well lasers; Semiconductor lasers; AlGaInAs/InP; Buried-Heterostructure; OMVPE; Thermal Cleaning;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516092
