Investigation of bonding strength and photoluminescence properties of InP/Si surface activated bonding

Author

Kondo, Simon ; Okumura, Tadashi ; Osabe, Ryo ; Nishiyama, Nobuhiko ; Arai, Shigehisa

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

A low-temperature direct wafer bonding technique has been researched by using plasma treatment. Si-to-Si direct bonding strength was 1.6 MPa by using plasma pretreatment prior to the heating and weighting. 1.4 MPa of InP/Si bonding strength was obtained by improving chemical cleaning process. On the other hand, photoluminescence properties of GaInAs/InP quantum wells bonded on Si substrate were investigated. An introduction of a 30-nm-thick superlattice buffer on the top of the wafer greatly suppressed photoluminescence intensity degradation near the bonded interface.

Keywords

III-V semiconductors; adhesive bonding; elemental semiconductors; gallium arsenide; gallium compounds; heat treatment; indium compounds; interface structure; nanofabrication; photoluminescence; plasma materials processing; semiconductor quantum wells; semiconductor superlattices; silicon; GaInAs-InP; InP-Si; Si; bonded interface; bonding strength; chemical cleaning process; low-temperature direct wafer bonding technique; photoluminescence; plasma treatment; quantum wells; size 30 nm; superlattice buffer; surface activated bonding; Chemical processes; Cleaning; Heating; Indium phosphide; Photoluminescence; Plasma chemistry; Plasma properties; Superlattices; Surface treatment; Wafer bonding; Direct Bonding; InP on Silicon; Superlattice Buffer; Surface Activated Bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516096

Filename

5516096