Title :
Characterizing nitrogen implant effects on 0.17 μm gate oxide thickness and charge-to-breakdown
Author :
Gupta, Raghu ; Thanh, Liem Do ; Fuller, Robert ; Young, Andrew ; Moser, Benjamin ; Ameen, Mike
Author_Institution :
Infineon Technol. Richmond, Sandston, VA, USA
Abstract :
We characterize the effect of nitrogen implants on the charge-to-breakdown (Qbd) characteristics of a 0.17 μm DRAM device. The characterization data includes effect of nitrogen dose and beam currents on Qbd, the variation of nitrogen dose as measured by thermaprobe over a full cryopump lifecycle and the effect of such variation on the actual gate oxide thickness and uniformity. Sensitivities of thermaprobe and gate oxide thickness to nitrogen dose are derived from the resulting dose curves
Keywords :
CMOS memory circuits; DRAM chips; MOSFET; ion implantation; nitrogen; semiconductor device breakdown; semiconductor device reliability; 0.17 micron; DRAM device; Si:N-SiO2; beam currents; charge-to-breakdown; cryopump lifecycle; gate oxide thickness; gate oxide uniformity; nitrogen dose effect; nitrogen dose variation; nitrogen implant effects; thermaprobe sensitivity; Current measurement; DRAM chips; Design for quality; Microelectronic implants; Nitrogen; Production; Random access memory; Resists; Testing; Thickness measurement;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924157
