Title :
Process performance for Axcelis MC3 300 mm implanter
Author :
Rathmell, R.D. ; Ray, A.M. ; Sato, F. ; Godfrey, C.J.
Author_Institution :
Axcelis Technol. Inc., Beverly, MA, USA
Abstract :
The process performance of the Axcelis Technologies MC3, medium current implanter for 300 mm wafers, is reviewed. The MC3 is based on an evolutionary design approach. It uses proven beam transport, electrostatic scanning, beam parallelism, and energy purity schemes based on the successful 8250HT design. Metals contamination, beam parallelism, energy purity, particles, and dose uniformity and repeatability are reviewed. The results show that metals contamination, parallelism, and particle contamination are better than those for the 8250HT. Energy purity, dose repeatability and uniformity are similar to the ones achieved with 8250HT
Keywords :
ion implantation; reviews; semiconductor device manufacture; 300 mm; 300 mm wafers; 8250HT design; Axcelis MC3 300 mm implanter; Axcelis Technologies MC3; beam parallelism; dose repeatability; dose uniformity; energy purity; evolutionary design approach; medium current implanter; metals contamination; process performance; review; Acceleration; Contamination; Electrostatics; Implants; Lenses; Magnetic analysis; Particle beams; Pollution measurement; Production systems; Throughput;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924163
