Floating-base InGaP/GaAs heterojunction phototransistors with low doped extrincsic base

Author

Park, M.S. ; Kim, D.S. ; Jang, J.H.

Author_Institution

Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

Floating-base InGaP/GaAs heterojunction phototransistors (HPTs) with low doped extrinsic base region are demonstrated. Electrical and optical characteristics of the fabricated HPTs with and without SiN_x passivation are investigated. Moreover, the optical gain of these HPTs is compared in terms of variation of the emitter size. The SiN_x passivated HPTs with 50×50 μm² of emitter size showed the superior high optical gain. The devices exhibited very high optical gain of 159 at optical power of 100 nW under 635 nm illumination.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; passivation; phototransistors; semiconductor heterojunctions; HPT; InGaP-GaAs; SiN_x; electrical characteristics; floating-base heterojunction phototransistors; low doped extrinsic base region; optical characteristics; optical gain; passivation; power 100 nW; size 50 mum; wavelength 635 nm; Gallium arsenide; Heterojunctions; Lighting; Optical films; Optical sensors; Optical surface waves; Passivation; Phototransistors; Radiative recombination; Stimulated emission; InGaP/GaAs; SiNx passivation; emitter size effect; optical gain; phototransistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516108

Filename

5516108