Title :
Floating-base InGaP/GaAs heterojunction phototransistors with low doped extrincsic base
Author :
Park, M.S. ; Kim, D.S. ; Jang, J.H.
Author_Institution :
Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
fDate :
May 31 2010-June 4 2010
Abstract :
Floating-base InGaP/GaAs heterojunction phototransistors (HPTs) with low doped extrinsic base region are demonstrated. Electrical and optical characteristics of the fabricated HPTs with and without SiNx passivation are investigated. Moreover, the optical gain of these HPTs is compared in terms of variation of the emitter size. The SiNx passivated HPTs with 50×50 μm2 of emitter size showed the superior high optical gain. The devices exhibited very high optical gain of 159 at optical power of 100 nW under 635 nm illumination.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; passivation; phototransistors; semiconductor heterojunctions; HPT; InGaP-GaAs; SiNx; electrical characteristics; floating-base heterojunction phototransistors; low doped extrinsic base region; optical characteristics; optical gain; passivation; power 100 nW; size 50 mum; wavelength 635 nm; Gallium arsenide; Heterojunctions; Lighting; Optical films; Optical sensors; Optical surface waves; Passivation; Phototransistors; Radiative recombination; Stimulated emission; InGaP/GaAs; SiNx passivation; emitter size effect; optical gain; phototransistors;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516108
