Title :
Extension of the MOSART circuit simulator to the analysis of BiCMOS circuits
Author :
Vachoux, A. ; Anwar, N.
Author_Institution :
Dept. of Electr. Eng., CIRC, Swiss Federal Inst. of Technol., Lausanne, Switzerland
fDate :
29 May-1 Jun 1990
Abstract :
MOSART is a MOS-VLSI time-domain simulator which implements the waveform relaxation analysis technique. The extension of the simulator to mixed bipolar-MOS circuits presented in this paper makes use of the particular structure of such circuits to decompose them without `breaking´ the bipolar transistors. A modified decomposition algorithm along with some application examples are also presented
Keywords :
BIMOS integrated circuits; application specific integrated circuits; circuit CAD; digital simulation; BiCMOS circuits; MOS-VLSI time-domain simulator; MOSART circuit simulator; decomposition algorithm; mixed bipolar-MOS circuits; waveform relaxation analysis technique; Analytical models; BiCMOS integrated circuits; Bipolar transistors; Capacitance; Circuit analysis; Circuit simulation; Coupling circuits; Differential equations; Time domain analysis; Voltage;
Conference_Titel :
Euro ASIC '90
Conference_Location :
Paris
Print_ISBN :
0-8186-2066-8
DOI :
10.1109/EASIC.1990.207967
