DocumentCode
3114129
Title
Growth defects in cultured quartz: a microscopic investigation
Author
Cordier, P. ; Doukhan, J.C. ; Buisson, X. ; Bignon, O.
Author_Institution
Lab. de Structure et Proprietes de l´´Etat Solide, Univ. de Lille-Flandres-Artois, Villeneuve d´´Ascq, France
fYear
1989
fDate
31 May-2 Jun 1989
Firstpage
459
Lastpage
469
Abstract
In some crystals, various types of defects are observed which can limit the performances of piezoelectric devices. Two distinct modes of water incorporation have been recognized, namely molecular water (tiny fluid inclusions with diameters down to 30 Å) and isolated point defects like the so-called 4HSi defects. The equilibrium concentration of this latter type of defects is extremely low at the usual T and P conditions of growth, but a supersaturation can occur for relatively large growth rates. The equilibrium concentration was determined as a function of T and P , and the diffusivity coefficient of the corresponding water species as a function of temperature was tentatively estimated
Keywords
crystal growth from solution; piezoelectric devices; quartz; cultured quartz; diffusivity coefficient; growth rates; isolated point defects; molecular water; piezoelectric devices; supersaturation; water incorporation; Crystallization; Crystals; Electromagnetic wave absorption; Impurities; Optical microscopy; Optical scattering; Solids; Surfaces; Temperature; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control, 1989., Proceedings of the 43rd Annual Symposium on
Conference_Location
Denver, CO
Type
conf
DOI
10.1109/FREQ.1989.68904
Filename
68904
Link To Document