Advantages of the varian VIISta single wafer high current ion implanter for advanced device fabrication

Author

Mezack, G. ; Callahan, T. ; Mehta, S. ; Jeong, U.

Author_Institution

Varian Semicond. Equip. Associates Inc., Gloucester, MA, USA

fYear

2000

fDate

2000

Firstpage

431

Lastpage

434

Abstract

Advanced IC designs are demanding a new level of performance and flexibility from the next generation of ion implanters. In addition to beamline improvements for charge control, energy contamination, metals and cross contamination, the industry is also experiencing a new requirement with the emergence of Large Angle Tilt Implants (LATI, 10-60 degrees). LATI can be employed to overcome Short Channel Effects (SCE) by the use of Halo/Pocket implants and more recently, for the control of gate overlap with SDE implants. This paper describes the beamline characteristics of the VSTIIa 80 single wafer high current implanter, from the standpoints of overall defect control and the tools ability to provide large angle tilt capability to address the needs of advanced scaled devices

Keywords

integrated circuit technology; ion implantation; ion sources; VSTIIa 80; advanced device fabrication; beamline characteristics; beamline improvements; defect control; gate overlap; large angle tilt implants; single wafer high current ion implanter; Apertures; Assembly; Dosimetry; Energy resolution; Implants; Ion beams; Lenses; Particle beam optics; Productivity; Pulse width modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924180

Filename

924180