Title :
Performance characteristics of the Varian VIISta 810 single wafer medium current ion implanter
Author :
Renau, A. ; Scheuer, J.T. ; Brennan, D. ; Todorov, S.S. ; Cucchetti, A. ; Olson, J.C.
Author_Institution :
Varian Semicond. Equip. Associates Inc., Gloucester, MA, USA
Abstract :
The design of the VSIIta 810 medium current implanter successfully addresses the needs of advanced semiconductor manufacturing by meeting the challenges of high productivity and reduced defect density. Data are presented verifying that the beamline design reduces the risk of defect production from particulate and metallic contamination while ensuring energy parity. Tuning time, reliability, dose uniformity and repeatability data demonstrate high productivity of the VIISta 810 for a wide range of energies, charge states and implant species for 200 mm and 300 mm wafers
Keywords :
beam handling equipment; ion beam applications; ion implantation; Varian VIISta 810; advanced semiconductor manufacturing; beamline design; defect density; dose uniformity; energy parity; metallic contamination; particulate contamination; reliability; repeatability; single wafer medium current ion implanter; tuning time; Contamination; Filtering; Hardware; Implants; Ion sources; Monitoring; Production systems; Productivity; Semiconductor device manufacture; Throughput;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924181
