DocumentCode :
3114292
Title :
Proposal of multi-wavelength integration of athermal GaAs VCSEL array with thermally actuated cantilever structure
Author :
Nakata, Norihiko ; Sano, Hayato ; Matsutani, Akihiro ; Koyama, Fumio
Author_Institution :
Microsyst. Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
fYear :
2010
fDate :
May 31 2010-June 4 2010
Firstpage :
1
Lastpage :
4
Abstract :
We propose a multi-wavelength and athermal VCSEL array with thermally-actuated cantilevers. The lithography-defined cantilever structure enables on-chip multi-wavelength integration. The experiment shows the wavelength spacing of 20 nm for 2-ch VCSEL array with different cantilever lengths.
Keywords :
III-V semiconductors; cantilevers; gallium arsenide; integrated optics; lithography; optical fabrication; semiconductor laser arrays; surface emitting lasers; GaAs; athermal VCSEL array; lithography defined cantilever structure; on chip multiwavelength integration; thermally actuated cantilever structure; Gallium arsenide; Micromechanical devices; Optical interconnections; Proposals; Stress control; Surface emitting lasers; Temperature dependence; Thermal expansion; Vertical cavity surface emitting lasers; Wavelength division multiplexing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
ISSN :
1092-8669
Print_ISBN :
978-1-4244-5919-3
Type :
conf
DOI :
10.1109/ICIPRM.2010.5516120
Filename :
5516120
Link To Document :
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