• DocumentCode
    3114352
  • Title

    Air-bridge contact fabrication for in-plane active photonic crystal devices

  • Author

    Kaspar, P. ; Kappeler, R. ; Friedli, P. ; Jaeckel, H.

  • Author_Institution
    Electron. Lab. (IfE), ETH Zurich, Zurich, Switzerland
  • fYear
    2010
  • fDate
    May 31 2010-June 4 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The fabrication of air-bridge contacts for in-plane active photonic crystal devices is presented. The technology allows to access waveguides as narrow as 200 nm. The main fabrication challenges described in detail are surface planarization and formation of isolation layers for contact pads. The issue of surface damage effects on dry-etched sidewalls is addressed and current measurements on narrow contacts were performed.
  • Keywords
    electrical contacts; photonic crystals; planarisation; air-bridge contact fabrication; contact pads; current measurements; dry-etched sidewalls; in-plane active photonic crystal devices; isolation layers; narrow contacts; surface damage effects; surface planarization; Contacts; Etching; Indium phosphide; Optical device fabrication; Optical surface waves; Optical waveguides; Photonic crystals; Planarization; Semiconductor materials; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
  • Conference_Location
    Kagawa
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4244-5919-3
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2010.5516124
  • Filename
    5516124