DocumentCode
3114352
Title
Air-bridge contact fabrication for in-plane active photonic crystal devices
Author
Kaspar, P. ; Kappeler, R. ; Friedli, P. ; Jaeckel, H.
Author_Institution
Electron. Lab. (IfE), ETH Zurich, Zurich, Switzerland
fYear
2010
fDate
May 31 2010-June 4 2010
Firstpage
1
Lastpage
4
Abstract
The fabrication of air-bridge contacts for in-plane active photonic crystal devices is presented. The technology allows to access waveguides as narrow as 200 nm. The main fabrication challenges described in detail are surface planarization and formation of isolation layers for contact pads. The issue of surface damage effects on dry-etched sidewalls is addressed and current measurements on narrow contacts were performed.
Keywords
electrical contacts; photonic crystals; planarisation; air-bridge contact fabrication; contact pads; current measurements; dry-etched sidewalls; in-plane active photonic crystal devices; isolation layers; narrow contacts; surface damage effects; surface planarization; Contacts; Etching; Indium phosphide; Optical device fabrication; Optical surface waves; Optical waveguides; Photonic crystals; Planarization; Semiconductor materials; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location
Kagawa
ISSN
1092-8669
Print_ISBN
978-1-4244-5919-3
Type
conf
DOI
10.1109/ICIPRM.2010.5516124
Filename
5516124
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