DocumentCode
3114384
Title
Investigation of hot electron luminescence in silicon by means of dual-gate MOSFET´s
Author
Selmi, L. ; Hon-Sum Wong ; Sangiorgi, E ; Lanzoni, M. ; Manfredi, M.
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
531
Lastpage
534
Abstract
This paper contributes to the experimental analysis of hot-carrier induced photon emission from silicon devices by reporting integral and spectrally resolved light intensity measurements on dual gate n-MOSFET´s. Exploiting the peculiar possibility, typical of this device structure, to move the light emission point between regions featuring significantly different doping concentrations, new insight is obtained on the contribution of radiative recombinations and ionized impurity assisted intraband transitions to the emitted light intensity.
Keywords
Doping; Electrons; Hot carriers; Impurities; Luminescence; MOSFET circuits; Photonic integrated circuits; Silicides; Silicon; Spontaneous emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.386471
Filename
4277250
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