DocumentCode :
3114425
Title :
Characterization of InAlAs/In0.25Ga0.75As0.72Sb0.28/InGaAs double heterojunction bipolar transistors
Author :
Chang, Chao-Min ; Chen, Shu-Han ; Wang, Sheng-Yu ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
fYear :
2010
fDate :
May 31 2010-June 4 2010
Firstpage :
1
Lastpage :
4
Abstract :
We report on the characterization of InP-based heterojunction bipolar transistors (HBTs) with low turn-on voltage and high current gain by using InGaAsSb as the base layer. The low turn-on voltage of 0.43 V is attributed to the smaller band gap of the In0.25Ga0.75As072Sb0.28 material. High current gain of 74 is observed despite a heavily Be-doped (9.0×1019 cm-3) base is used, suggesting a long minority carrier lifetime (τn) in the InGaAsSb material. Moreover, low specific contact resistivity of 5×10-8 Ω-cm2 is also demonstrated on separate In0.25Ga0.75As072Sb0.28 samples.
Keywords :
aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; HBT; InAlAs-In0.25Ga0.75As0.72Sb0.28-InGaAs; InP; double heterojunction bipolar transistors; voltage 0.43 V; Composite materials; Double heterojunction bipolar transistors; Electron emission; Indium compounds; Indium gallium arsenide; Indium phosphide; Low voltage; Molecular beam epitaxial growth; Photonic band gap; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
ISSN :
1092-8669
Print_ISBN :
978-1-4244-5919-3
Type :
conf
DOI :
10.1109/ICIPRM.2010.5516128
Filename :
5516128
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3114425
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