Title :
1.7 Gb/s NMOS laser driver
Author :
Shastri, K.R. ; Wong, K.N. ; Yanushefski, K.A.
Author_Institution :
AT&T Bell Labs., Allentown, PA, USA
Abstract :
A laser driver is designed in a 0.75-μm NMOS technology to modulate laser diodes at 1.7 Gb/s with an adjustable modulation current from 10-50 mA and rise/fall times of 250-300 ps. This IC operates over a supply voltage of 3.3 V±10%, an input voltage of 4-1.2 V, a temperature range of -55 to +100°C and a normal processing range with a measured bit-error-rate of 3×10-11 at a received power of -32.8 dBm
Keywords :
field effect integrated circuits; optical modulation; semiconductor junction lasers; -55 to 100 degC; 0.75 micron; 1.2 to 4 V; 1.7 Gbits; 250 to 300 ps; 3.3 V; NMOS technology; adjustable modulation current; bit-error-rate; input voltage; laser diodes; laser driver; processing range; received power; rise/fall times; supply voltage; Diode lasers; Driver circuits; MOS devices; MOSFETs; Optical design; Power measurement; Pulse modulation; Pulse shaping methods; Temperature distribution; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 1988., Proceedings of the IEEE 1988
Conference_Location :
Rochester, NY
DOI :
10.1109/CICC.1988.20801
