Title :
High linearity 2-bit current steering InP/GaInAs DHBT digital-to-analog converter
Author :
Kraus, S. ; Kallfass, I. ; Makon, R.E. ; Rosenzweig, J. ; Driad, R. ; Moyal, M. ; Ritter, D.
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
fDate :
May 31 2010-June 4 2010
Abstract :
We present a high linearity 2-bit digital-to-analog converter (DAC) implemented in an InP/GaInAs DHBT technology. The DAC is based upon the current steering architecture. Cascode structure and layout techniques, i.e. static shuffling and dummy devices, have been used to enhance the linearity. The DAC exhibits static integral/differential nonlinearities of 5.5 × 10-3 LSB, equivalent to a resolution of 9.2 bits. Dynamic measurements qualitatively show proper behavior at 6 GS/s, while simulations with typical on-chip load exhibit sufficiently fast settling at 20 GS/s.
Keywords :
circuit layout; digital-analogue conversion; gallium compounds; heterojunction bipolar transistors; indium compounds; DHBT digital-to-analog converter; InP-GaInAs; cascode structure; dummy devices; high linearity 2-bit current steering; layout techniques; static integral-differential nonlinearities; static shuffling; DH-HEMTs; Digital-analog conversion; Heterojunction bipolar transistors; Indium phosphide; Linearity; Physics; Resistors; Sampling methods; Solid state circuits; Switches;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516140