Thin-film GaInAsP/InP lateral current injection type Fabry-Perot laser — Improved quantum efficiency operation

Author

Ito, Hitomi ; Okumura, Tadashi ; Kondo, Daisuke ; Nishiyama, Nobuhiko ; Arai, Shigehisa

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

Based on a theoretical analysis of internal quantum efficiency of a thin-film GaInAsP/InP lateral current injection type Fabry-Perot laser prepared on the semi-insulating InP substrate, its fabrication process was modified. As the results, the internal quantum efficiency was improved by a factor of 2 and the waveguide loss was reduced to 2/3 in comparison with previously reported devices. A threshold current of 11 mA and an external differential quantum efficiency of 33% were obtained for the device with 720 μm-long cavity and 1.7 μm-wide stripe under a room temperature continuous-wave condition.

Keywords

Fabry-Perot resonators; III-V semiconductors; gallium compounds; indium compounds; laser cavity resonators; semiconductor lasers; Fabry-Perot laser; GaInAsP-InP; continuous wave condition; internal quantum efficiency; lateral current injection; semi-insulating substrate; size 1.7 mum; size 720 mum; waveguide loss; Fabry-Perot; Indium phosphide; Laser theory; Optical device fabrication; Quantum mechanics; Substrates; Temperature; Threshold current; Transistors; Waveguide lasers; Lateral current injection; Membrane structure; Photonic Integrated Circuit;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516144

Filename

5516144