Title :
Decaborane ion source demonstration
Author :
Vella, Michael C. ; Tysinger, Randy ; Reilly, Michael ; Brown, Bob
Author_Institution :
Lawrence Berkeley Nucl. Lab., CA, USA
Abstract :
This project demonstrated concept and feasibility of a proprietary high current decaborane ion source suitable for ultra shallow doping. This was motivated by the attractive scaling of decaborane ions for space charge dominated extraction and transport. A highly modified Bernas source was mounted on an NV-10/80 implanter. Using standard extraction and beamline components, 2.3 mA of boron nucleon current was produced in the form of B14Hx+ at 50 kV. Under dense plasma, beam current scaled linearly with extraction voltage
Keywords :
ion implantation; ion sources; semiconductor doping; 2.3 mA; 50 kV; NV-10/80 implanter; beam current; dense plasma; extraction voltage; high current decaborane ion source; modified Bernas source; nucleon current; space charge; ultra shallow doping; Boron; Doping; Implants; Ion sources; Physics; Plasma density; Plasma devices; Plasma sources; Plasma transport processes; Space charge;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924205
