DocumentCode
311477
Title
Effect of growth conditions on thermal stress development in high pressure LEC grown InP crystals
Author
Zou, Y.F. ; Wang, G.-X. ; Zhang, H. ; Prasad, V. ; Bliss, D.F.
Author_Institution
Consortium for Crystal Growth Res., State Univ. of New York, Stony Brook, NY, USA
fYear
1997
fDate
11-15 May 1997
Firstpage
276
Lastpage
279
Abstract
In this work, the MASTRAPP model has been used to investigate the effect of growth conditions on the development of thermal stress in a HPLEC grown InP crystal. In particular, it examines the variation of the resulting thermal stress under the conditions of both high and low axial temperature gradients. The effect of melt flow on stress development has also been examined
Keywords
III-V semiconductors; crystal growth from melt; indium compounds; semiconductor growth; thermal stresses; InP; InP crystal; MASTRAPP mode; axial temperature gradient; high pressure LEC growth; melt flow; thermal stress; Crystals; Fluid flow; Furnaces; Gallium arsenide; Heating; Indium phosphide; Laboratories; Occupational stress; Temperature control; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location
Cape Cod, MA
ISSN
1092-8669
Print_ISBN
0-7803-3898-7
Type
conf
DOI
10.1109/ICIPRM.1997.600125
Filename
600125
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