Title :
Mechanism and structural dependence of kink phenomena in InAlAs/InGaAs HEMTs
Author :
Suemitsu, Tetsuya ; Enoki, Takatomo ; Tomizawa, Masaaki ; Shigekawa, Naoteru ; Ishii, Yasunobu
Author_Institution :
NTT Syst. Electron. Labs., Kanagawa, Japan
Abstract :
The aim of this study is to find out the relationship between the kink and the structure of InAlAs/InGaAs HEMTs, or in other words, what the main parameters affecting the kink are. Two-dimensional device simulations were performed for this purpose, in which impact ionization and surface states were considered. For the impact ionization, an improved model which takes non-local effects into account was used for accurate estimation of ionization coefficients. The surface states in the side-etched region, expressed using a deep-level trap, were also necessary to represent the kink in the device simulation
Keywords :
III-V semiconductors; aluminium compounds; deep levels; electron density; gallium arsenide; high electron mobility transistors; hole density; impact ionisation; indium compounds; semiconductor device models; surface states; InAlAs-InGaAs; InAlAs/InGaAs HEMTs; deep-level trap; drift-diffusion model; impact ionization; kink phenomena; nonlocal effects; side-etched region; structural dependence; surface pinning; surface states; two-dimensional device simulations; Electron traps; FETs; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; MODFETs; Semiconductor device modeling; Semiconductor process modeling; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600160
