Title :
Commercialisation of InP based epitaxy: state of the art and beyond!
Author :
Bland, S.W. ; Davies, J.I. ; Nelson, A.W. ; Rees, P.K. ; Scott, M.D.
Author_Institution :
Epitaxial Products International Ltd., Cardiff, UK
Abstract :
Summary form only given. Over the last decade, InP technology and its related Materials have grown enormously in strategic importance as the technology has facilitated the explosive growth in optical fibre telecommunications, which in turn has spawned a huge communications revolution. In addition, InP based materials have been exploited for many other applications such as long wavelength IR detector arrays, gas sensing applications, imaging, solar cells, high speed HEMT and HBTs, high power FETs and several other mm and microwave devices
Keywords :
III-V semiconductors; indium compounds; semiconductor epitaxial layers; semiconductor growth; InP; InP technology; commercialisation; epitaxy; optical fibre telecommunication; state of the art; Epitaxial growth; Explosives; Indium phosphide; Infrared detectors; Microwave antenna arrays; Microwave communication; Microwave imaging; Optical fibers; Optical materials; Sensor arrays;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600222
