Title :
Characterization of a Xenon plasma electron flood gun on a GSD-200E 2 high current implanter using QBD, FLASH, SPIDER, and CHARMTM-2 wafers
Author :
Kopalidis, Peter ; Erokhin, Yuri ; Santiesteban, Ramon ; Soncini, Valter
Author_Institution :
Axcelis Technol. Inc., Beverly, MA, USA
Abstract :
An enhanced xenon plasma electron flood gun (PEF-Xe) used in a GSD-200E2 ion implanter is characterized by means of various wafer test structures. High dose/beam current implants are performed under different PEF settings to investigate the charge neutralization capability of the tool. QBD, FLASH, SPIDER and CHARMTM -2 test structures are used to explore a range of operating conditions for high beam current arsenic implants
Keywords :
MOSFET; arsenic; electron guns; electron sources; flash memories; ion implantation; plasma materials processing; semiconductor device measurement; semiconductor device testing; semiconductor doping; xenon; CHARM-2 wafers; FLASH wafers; GSD-200E2 high current implanter; PEF-Xe; QBD wafers; SPIDER wafers; Xe; charge neutralization capability; enhanced Xenon plasma electron flood gun; flash memory; high beam current arsenic implants; high dose/beam current implants; nmos transistor; operating condition; pmos transistors; wafer test structures; xenon plasma electron flood gun; Antenna measurements; Design for quality; Electrons; Flash memory; Floods; Implants; Plasmas; Testing; Threshold voltage; Xenon;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924212
