Title :
Implant charging dependence on photo resist bake and electron flood gun
Author :
Romig, Terry ; Chao, King ; Rendon, Michael J. ; Azrack, Marijean
Author_Institution :
Motorola Inc., Austin, TX, USA
Abstract :
Some ASIC parts in the 0.5 μm range experienced severe yield loss due to implant charging issues during the source/drain extension implant. The failing dice were in a circular pattern. The edge intensive poly over gate oxide test structures showed depressed breakdown voltages while other gate oxide integrity structures were not affected. Photo resist out-gassing induced vacuum related holds had strong correlation to reduced yield and depressed breakdown voltages. Replacing the forward biased electron shower with the newer reverse biased electron shower showed improved yield while the optimization of the photo resist UV bake eliminated the vacuum related holds
Keywords :
application specific integrated circuits; electric breakdown; electron guns; electron-surface impact; failure analysis; integrated circuit reliability; integrated circuit testing; integrated circuit yield; ion implantation; outgassing; photoresists; semiconductor device breakdown; semiconductor doping; surface charging; 0.5 mum; ASIC parts; breakdown voltages; circular pattern; depressed breakdown voltages; edge intensive poly over gate oxide test structures; electron flood gun; failing dice; forward biased electron shower; gate oxide integrity structures; implant charging; photo resist UV bake; photo resist bake; photoresist out-gassing; reduced yield; reverse biased electron shower; source/drain extension implant; vacuum related holds; yield loss; Application specific integrated circuits; Chaos; Electron beams; Electron tubes; Floods; Implants; Potential well; Resists; Testing; Vacuum breakdown;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924213
