Title :
Monolithic InP HEMT/HBT integrated circuit technology by selective molecular beam epitaxy
Author :
Cowles, J. ; Lai, R. ; Tran, L. ; Wang, H. ; Chen, Y.C. ; Kobayashi, K. ; Block, T. ; Yen, H.C. ; Liu, P. ; Oki, A. ; Streit, D.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
Co-integration of high performance InP HEMTs and HBTs has been achieved using selective MBE. The merged device technologies maintain the performance of their stand-alone counterparts and show excellent yield and uniformity. The first monolithic integrated circuits featuring both InP HEMTs and HBTs have been presented. The successful merging of these technologies on the same InP substrate represents a significant step towards larger scale millimeter wave integration and innovative system architectures
Keywords :
HEMT integrated circuits; III-V semiconductors; MIMIC; bipolar integrated circuits; heterojunction bipolar transistors; indium compounds; integrated circuit measurement; integrated circuit technology; integrated circuit yield; molecular beam epitaxial growth; semiconductor growth; IC performance; InAlAs-InGaAs-InP; InP; co-integration; large scale millimeter wave integration; merged device technologies; monolithic InP HEMT/HBT integrated circuit technology; selective MBE; uniformity; yield; Etching; HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated circuit interconnections; Integrated circuit technology; Molecular beam epitaxial growth; Space technology; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600247
