Title :
Chirp optimization of 1550nm InAs/InP Quantum Dash based directly modulated lasers for 10Gb/s SMF transmission up to 65Km
Author :
Lelarge, F. ; Chimot, N. ; Rousseau, B. ; Martin, F. ; Brenot, R. ; Accard, A.
Author_Institution :
III-V Lab., Alcatel Thales III-V Lab., Marcoussis, France
fDate :
May 31 2010-June 4 2010
Abstract :
Static and dynamic properties of InP-based Quantum Dashes of 1.55μm directly modulated lasers are reported. Using growth and design optimization, we demonstrate linewidth enhancement factor above threshold as low as 2 and decreasing with injected current. This unique chirp behavior leads to uncompensated and non-amplified SMF 10Gb/s transmissions at a constant bias current from back-to-back up to 65km. This result opens the way to the fabrication of a low cost DML for access and metro applications.
Keywords :
III-V semiconductors; chirp modulation; indium compounds; quantum dash lasers; InAs-InP; bit rate 10 Gbit/s; chirp optimization; design optimization; directly modulated lasers; growth optimization; linewidth enhancement factor; quantum dash lasers; single-mode fibers; wavelength 1550 nm; Chirp modulation; Costs; Design optimization; Distributed feedback devices; Gas lasers; Indium phosphide; Laser modes; Quantum dot lasers; Quantum dots; Quantum well devices; InP-based directly modulated lasers; Quantum dashes; gas source molecular beam epitaxy; opto electronic devices;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516152
