Title :
Two-section InGaAsP DBR-lasers at 1.55 μm wavelength with 31 GHz direct modulation bandwidth
Author :
Kjebon, O. ; Schatz, R. ; Lourdudoss, S. ; Nilsson, S. ; Stålnacke, B. ; Backbom, L.
Author_Institution :
Lab. of Photonics & Microwave Eng., R. Inst. of Technol., Kista, Sweden
Abstract :
The small signal modulation response of two-section InGaAsP DBR-lasers at 1.55 μm wavelength was investigated. The response was fitted to a general transfer function and it was found that for almost all lasers the response could be described by a three pole model consisting of the laser response from the standard rate equations and an additional first order low pass roll-off. The lasers exhibited reduced damping and increased resonance frequency due to what we believe is detuned loading. This led to a maximum bandwidth of 30 GHz for lasers described by the three pole model. Some lasers exhibited an additional effect which we believe is cavity resonant enhancement of one of the modulation side-bands. This effect increased the maximum -3dB bandwidth to 31 GHz but could not be described by a three pole model
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; optical modulation; semiconductor lasers; transfer functions; 1.55 micron; 31 GHz; InGaAsP; cavity resonance; damping; detuned loading; direct modulation bandwidth; low pass roll-off; rate equation; side-band; small signal response; three pole model; transfer function; two-section InGaAsP DBR laser; Bandwidth; Chirp modulation; Damping; Indium phosphide; Laboratories; Laser modes; Optical modulation; Resonance; Resonant frequency; Transfer functions;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600265
