Title :
Performance of a plasma flood gun in the medium current ion implanter Exceed200OA
Author :
Tanj, Masayasu ; Sakai, Shigeki ; Kejiri, Tadashi ; Nakao, Kazuhiro ; Nagayama, Tsutomu
Author_Institution :
Nissin Ion Equipment Co. Ltd., Kyoto, Japan
Abstract :
Device charging problems arise in medium-current ion implantation processes due to the very thin gate oxide thickness and large photo-resist coverage ratio. To compensate the ion beam charge-up a PFG for the hybrid scanning medium current ion implanter Exceed2000A was developed which didn´t degrade the dose uniformity (<0.5%), dose shift (<2%), and a metal contamination under a condition with a clamp-less electrostatic chuck. The characteristics of this PFG is evaluated by MOS Capacitor TEG, floating electrode charge sensor and Charm2 wafer, which show good charge compensation performances. The small flow rate of the PFG gas makes it possible to apply a PFG to the medium current ion implanter
Keywords :
MOS capacitors; charge compensation; ion implantation; plasma materials processing; semiconductor doping; Charm2 wafer; Exceed200OA; MOS Capacitor TEG; charge compensation performances; clamp-less electrostatic chuck; compensate; device charging problems; dose shift; dose uniformity; floating electrode charge sensor; ion beam charge-up; medium current ion implanter; metal contamination; photo-resist coverage ratio; plasma flood gun; very thin gate oxide thickness; Contamination; Degradation; Electrodes; Electrostatics; Floods; Ion beams; Ion implantation; MOS capacitors; Plasma devices; Plasma immersion ion implantation;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924221
