A low energy plasma flood gun using RF plasma formation

Author

Sakai, Shigeh ; Hamamoto, Nariaki ; Ikejiri, Tadashi ; Tanjyo, Masayasu

Author_Institution

Dept. of Eng. & Productio, Nisson Ion Equipment Co. Ltd., Kyoto, Japan

fYear

2000

fDate

2000

Firstpage

592

Lastpage

595

Abstract

A plasma flood gun (PFG) system useful for 300 mm wafer has been developed by using an RF plasma for the medium current implanter EXCEED2300. To produce low energy electrons, the electron energy is filtered by magnetic fields. To eliminate dose shift, a low flow rate of Xe gas is adopted. A linear geometry of the plasma production source chamber improves the spatial uniformity of the plasma flooding across the 300 mm wafer. The metal contamination and the maintenance time are also greatly improved with the RF plasma formation

Keywords

ion implantation; plasma materials processing; semiconductor doping; 300 mm; RF plasma formation; dose shift; electron energy; ion implantation; linear geometry; low energy electrons; low energy plasma flood gun; magnetic fields; maintenance time; medium current implanter EXCEED2300; metal contamination; plasma production source chamber; Electrodes; Electrons; Floods; Plasma density; Plasma immersion ion implantation; Plasma measurements; Plasma properties; Plasma sources; Production; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924222

Filename

924222