Title :
In-line characterization of preamorphous implants (PAI)
Author :
Borden, Peter ; Ferguson, Clarence ; Sing, David ; Larson, Larry ; Bechtler, Laurie ; Jones, Kevin ; Gable, Peter
Author_Institution :
Boxer Cross Inc., Menlo Park, CA, USA
Abstract :
Amorphous layers formed with Ge implantation into Si over a range of energy (5 to 70 keV) and dose (0.5 to 3×1015/cm2) were characterized using carrier illumination (CI), variable angle spectroscopic ellipsometry (VASE), and cross-sectional transmission electron microscopy (XTEM). The CI signal varies lineariy with XTEM depth to 860 Å. The VASE response is monotonic, and can be linearized with additional calibration. Both methods are sensitive to amorphous layer depth and exhibit no dose sensitivity. CI is additionally sensitive to depth differences between 0° to 7° implant angles
Keywords :
amorphisation; amorphous semiconductors; calibration; elemental semiconductors; ellipsometry; germanium; ion implantation; semiconductor doping; sensitivity; silicon; transmission electron microscopy; CI signal; Si:Ge; VASE response; XTEM depth; amorphous layer depth; amorphous layers; carrier illumination; cross-sectional transmission electron microscopy; implant angle; implantation dose; implantation energy; in-line characterization; preamorphous implants; variable angle spectroscopic ellipsometry; Amorphous materials; Calibration; Electric variables control; Ellipsometry; Implants; Lighting; Process control; Spectroscopy; Transmission electron microscopy; Wavelength measurement;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924233
