• DocumentCode
    3115206
  • Title

    Low and high dose process monitoring using the BX-10 implant monitor system

  • Author

    Sing, David ; Borden, Peter ; Bechtler, Laurie

  • Author_Institution
    Motorola Int. Sematech, Austin, TX, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    639
  • Lastpage
    641
  • Abstract
    The Boxer Cross BX-10 metrology tool was developed to provide in-line nondestructive measurement of critical ultra-shallow junction processes for sub-0.18 micron devices. Most of the experimental work to date has been on the use of the BX-10 to provide shallow junction depth measurements on annealed implants. However, capability has been demonstrated for the BX-10 to measure low dose and high dose process monitor wafers, and the ability of the BX-10 to provide implant monitoring supplements its role as an in-line junction depth monitor. This paper evaluates the statistical process capability of the BX-10 for monitoring low dose implants on nonannealed wafers and high dose implants on annealed wafers
  • Keywords
    ion implantation; process monitoring; spatial variables measurement; BX-10 implant monitor system; Boxer Cross BX-10 metrology tool; annealed wafers; critical ultra-shallow junction processes; high dose process; in-line nondestructive measurement; low dose process; nonannealed wafers; process monitoring; statistical process capability; sub-0.18 micron devices; wafers; Electrical resistance measurement; Implants; Metrology; Monitoring; Production; Rapid thermal annealing; Reflectivity; Testing; Thermal resistance; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology, 2000. Conference on
  • Conference_Location
    Alpbach
  • Print_ISBN
    0-7803-6462-7
  • Type

    conf

  • DOI
    10.1109/.2000.924234
  • Filename
    924234