High reliability performance of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates

Author

Chou, Y.C. ; Leung, D.L. ; Biedenbender, M. ; Eng, D.C. ; Buttari, D. ; Mei, X.B. ; Lin, C.H. ; Tsai, R.S. ; Lai, R. ; Barsky, M.E. ; Wojtowicz, M. ; Oki, A.K. ; Block, T.R.

Author_Institution

Microelectron. Processes & Products Center, Northrop Grumman Corp., Redondo Beach, CA, USA

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

Accelerated temperature lifetesting at T_channel of 240, 255, and 270°C was performed on 0.1-μm Pt-sunken InP HEMT low-noise amplifiers fabricated on 100 mm InP substrates. The reliability performance was evaluated based on ΔS21 <; -1 dB at 35 GHz. The lifetesting results exhibit activation energy of approximately 1.8 eV and lifetime projection of 99% reliability and 90% confidence exceeds 1 × 10⁸ hours at T_channel of 125°C. The high reliability demonstration of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates is essential for advanced military/space applications requiring high reliability performance.

Keywords

high electron mobility transistors; indium compounds; integrated circuit reliability; low noise amplifiers; platinum; HEMT low-noise amplifiers; InP; accelerated temperature lifetesting; advanced military-space applications; electron volt energy 1.8 eV; size 0.1 mum; size 100 mm; temperature 125 degC; temperature 240 degC; temperature 255 degC; temperature 270 degC; Acceleration; HEMTs; Indium phosphide; Integrated circuit reliability; Low-noise amplifiers; MMICs; Microelectronics; Millimeter wave technology; Temperature; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516184

Filename

5516184