Title :
Modeling of the formation and properties of nanocrystals in insulator matrices (SiO2:Si, ZrO2(Y):Zr) produced by ion implantation
Author :
Eckstein, W. ; Gorshkov, O.N. ; Kasatkin, A.P. ; Novikov, V.K. ; Tetelbaum, D.I. ; Trusbin, S.A. ; Ostashov, A.S. ; Mikhailov, A.N.
Author_Institution :
Max-Planck-Inst. fur Plasmaphys., Garching bei Munchen, Germany
Abstract :
The Si+-dose dependence of the photoluminescence (PL) intensity at λ=800 nm for the SiO2 with Si nanoinclusions (NI) and optical transmission for the ZrO2(Y) with metallic Zr NIs produced by ion implantation are studied. It is shown that dose dependence of PL is defined by the increase of the NI surface density, the mean size of NIs being constant until their merging. The kinetics of NI accumulation is estimated with the Monte Carlo TRIDIN and TRIM codes and taking into account the diffusion of excess atoms and NI nucleation. The earlier revealed mechanisms of a PL enhancement at phosphorus doping are investigated. It is concluded that the PL enhancement is caused by the donor properties of phosphorus in Si NIs (quantum dots) and passivation of broken bonds (nonradiative centers)
Keywords :
Monte Carlo methods; ion implantation; nanostructured materials; photoluminescence; silicon; silicon compounds; visible spectra; zirconium; zirconium compounds; Monte Carlo TRIDIN codes; Monte Carlo TRIM codes; Si nanoinclusions; SiO2:Si; ZrO2(Y):Zr; broken bonds; donor properties; dose dependence; ion implantation; mean size; nanocrystals in insulator matrices; nonradiative centers; optical transmission; passivation; photoluminescence; quantum dots; surface density; Doping; Ion implantation; Kinetic theory; Merging; Monte Carlo methods; Nanocrystals; Particle beam optics; Photoluminescence; Quantum dots; Zirconium;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924264
