DocumentCode
3115781
Title
Intense UV-visible photoluminescence from Si+ and N+ co-implanted thermal SiO2 films
Author
Yu, Y.H. ; Li, L. ; Lei, Y.M. ; Zhao, J. ; Mao, D.S. ; Zou, S.C. ; Sundaraval, B. ; Luo, E.Z. ; Wong, S.P. ; Xu, J.B. ; Wilson, I.H.
Author_Institution
Inst. of Metall., Acad. Sinica, Shanghai, China
fYear
2000
fDate
2000
Firstpage
765
Lastpage
768
Abstract
Intense UV-visible photoluminescence (PL) is observed at room temperature from thermal SiO2 films implanted with Si and N ions. A flat Si profile was first created. N ions were subsequently implanted into the same depth region as the implanted Si ions. Two PL bands peaking at ~330 nm and ~430 nm were observed from the samples at room temperature with and without annealing. The stability of the implanted ions particularly N ions is evaluated by non-Rutherford backscattering spectroscopy. Electron spin resonance was also used to characterize the modifications of the Si+ and N+ coimplanted SiO2 films. It is found that the PL has a strong dependence on the stabilized N in the Si+ and N+ coimplanted SiO2 films. The PL is suggested to originate from complex of Si, N and O
Keywords
annealing; insulating thin films; ion implantation; nitrogen; photoluminescence; silicon; silicon compounds; 330 nm; 430 nm; SiO2:Si,N; SiO2:Si+,N+; co-implanted thermal SiO2 films; electron spin resonance; intense UV-visible photoluminescence; non-Rutherford backscattering spectroscopy; Amorphous materials; Annealing; Ion beams; Luminescence; Optical films; Paramagnetic resonance; Photoluminescence; Semiconductor films; Semiconductor materials; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology, 2000. Conference on
Conference_Location
Alpbach
Print_ISBN
0-7803-6462-7
Type
conf
DOI
10.1109/.2000.924266
Filename
924266
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