DocumentCode
3115789
Title
Improvement in noise figure of wide-gate-head InP-based HEMTs with cavity structure
Author
Takahashi, T. ; Sato, M. ; Nakasha, Y. ; Hirose, T. ; Hara, N.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
2010
fDate
May 31 2010-June 4 2010
Firstpage
1
Lastpage
4
Abstract
Dependences of minimum noise figure at 94 GHz on gate-head length were studied using InP-based HEMTs. The noise figure was improved effectively by using a cavity structure even though a wide gate-head was employed. Wide gate-head InP-based HEMTs with a cavity structure are promising candidates for improving low-noise properties at millimeter-wave frequencies.
Keywords
high electron mobility transistors; indium compounds; InP; cavity structure; frequency 94 GHz; low-noise properties; millimeter-wave frequencies; noise figure; wide-gate-head based HEMT; Charge carrier density; Fabrication; HEMTs; Head; Indium phosphide; MODFETs; Millimeter wave transistors; Noise figure; Parasitic capacitance; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location
Kagawa
ISSN
1092-8669
Print_ISBN
978-1-4244-5919-3
Type
conf
DOI
10.1109/ICIPRM.2010.5516196
Filename
5516196
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