Title :
Cubic boron nitride thin films prepared by ion-beam assisted pulsed Nd:YAG laser deposition
Author :
Suda, Yoshiaki ; Kawasaki, Hiroharu ; Doi, Kazuya ; Namba, Jun ; Nakazono, Takeshi ; Ohshima, Tamiko
Author_Institution :
Dept. of Electr. Eng., Sasebo Coll. of Technol., Japan
Abstract :
Cubic boron nitride (cBN) thin films are synthesized on Si(100) substrates by a pulsed neodymium:yttrium-aluminum-garnet (Nd:YAG) laser deposition method using an ion beam in order to enhance the synthesis of the cBN phase. The deposited films were characterized by a Fourier transform infrared (FTIR) measurement method. When argon mixed nitrogen gas was used, there are clear three absorption peaks for hBN at 1370 cm -1 and 800 cm-1, and the absorption for cBN at 1050 cm-1. With increasing ion beam current and ion beam voltage, the peaks for hBN decrease. However, the peak for cBN does not decrease. These results suggest that nitrogen and argon ion bombardment plays an important role in the formation of cBN films
Keywords :
Fourier transform spectra; III-V semiconductors; boron compounds; infrared spectra; ion beam assisted deposition; pulsed laser deposition; semiconductor thin films; wide band gap semiconductors; BN; FTIR spectra; Si; Si(100) substrates; cubic thin films; ion beam current; ion beam voltage; ion bombardment; ion-beam assisted pulsed Nd:YAG laser deposition; Argon; Boron; Electromagnetic wave absorption; Gas lasers; Ion beams; Nitrogen; Optical pulses; Pulsed laser deposition; Sputtering; Transistors;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924271
