Cubic boron nitride thin films prepared by ion-beam assisted pulsed Nd:YAG laser deposition

Author

Suda, Yoshiaki ; Kawasaki, Hiroharu ; Doi, Kazuya ; Namba, Jun ; Nakazono, Takeshi ; Ohshima, Tamiko

Author_Institution

Dept. of Electr. Eng., Sasebo Coll. of Technol., Japan

fYear

2000

fDate

2000

Firstpage

785

Lastpage

788

Abstract

Cubic boron nitride (cBN) thin films are synthesized on Si(100) substrates by a pulsed neodymium:yttrium-aluminum-garnet (Nd:YAG) laser deposition method using an ion beam in order to enhance the synthesis of the cBN phase. The deposited films were characterized by a Fourier transform infrared (FTIR) measurement method. When argon mixed nitrogen gas was used, there are clear three absorption peaks for hBN at 1370 cm ^-1 and 800 cm^-1, and the absorption for cBN at 1050 cm^-1. With increasing ion beam current and ion beam voltage, the peaks for hBN decrease. However, the peak for cBN does not decrease. These results suggest that nitrogen and argon ion bombardment plays an important role in the formation of cBN films

Keywords

Fourier transform spectra; III-V semiconductors; boron compounds; infrared spectra; ion beam assisted deposition; pulsed laser deposition; semiconductor thin films; wide band gap semiconductors; BN; FTIR spectra; Si; Si(100) substrates; cubic thin films; ion beam current; ion beam voltage; ion bombardment; ion-beam assisted pulsed Nd:YAG laser deposition; Argon; Boron; Electromagnetic wave absorption; Gas lasers; Ion beams; Nitrogen; Optical pulses; Pulsed laser deposition; Sputtering; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924271

Filename

924271