Title :
Low excess noise APD with detection capabilities above 2 microns
Author :
Goh, Y.L. ; Ong, D.S.G. ; Zhang, S. ; Ng, J.S. ; Tan, C.H. ; David, J.P.R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
fDate :
May 31 2010-June 4 2010
Abstract :
In this work, we present the study on Separate Absorption, Charge and Multiplication (SACM) APDs utilising In0.52Al0.48As as the multiplication layer and In0.53Ga0.47As/GaAs0.51Sb0.49 periodic heterostructures as the absorption layer. In0.52Al0.48As lattice matched to InP has been shown to have superior excess noise characteristics and multiplication with relatively low temperature dependence compared to InP. Furthermore, the type-II staggered band line-up of In0.53Ga0.47As/GaAs0.51Sb0.49 heterostructures leads to a narrower effective bandgap of approximately 0.49 eV corresponding to the APD cut off wavelength of 2.4 μm. The SACM APD exhibited low dark current densities near breakdown. The device also exhibited multiplication in excess of 100 at 200 K. The excess noise of the APD was low as expected, and is comparable to that of a 1 μm In0.52Al0.48As PIN diode.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; current density; gallium arsenide; gallium compounds; indium compounds; semiconductor device breakdown; semiconductor device noise; In0.52Al0.48As; In0.53Ga0.47As-GaAs0.51Sb0.49; absorption layer; detection capabilities; low dark current densities; low excess noise APD; multiplication layer; separate absorption charge and multiplication; Absorption; Chemical industry; Dark current; Indium phosphide; Ionization; Lattices; Noise measurement; Photonic band gap; Signal to noise ratio; Temperature;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516200
