DocumentCode :
3115923
Title :
200 keV ion implantation experiments in very high dose region
Author :
Ito, Yoshifumi ; Ishigami, Ryoya ; Yasuda, Keisuke ; Hatori, Satoshi ; Yamamoto, Akio
Author_Institution :
Wakasa-wan Energy Res. Center, Fukui, Japan
fYear :
2000
fDate :
2000
Firstpage :
793
Lastpage :
796
Abstract :
Nitrogen ions with an energy of 190 keV were implanted into the aluminum rich alloy (95% Al and 5% Mg) in the dose region from 2×1017 to 2×1019 ions/cm2. The wurtzite type hcp AlN structure with a c-axis preferred orientation was formed. The nitrogen depth profile was Gaussian-like for low doses and the profile became trapezoidal with a flat-topped plateau almost equal to the stoichiometric ratio of AlN in the dose region more than 5×1017 ions/cm2. For very high doses more than 8×1018 ions/cm2, both the thickness of the AlN layer and the width ΔW of the nitrogen existence layer in front of AlN broadened as the dose increased. In case of dose 2×10 19 ions/cm2, the thickness was 1.2 μm and ΔW was 0.3 μm
Keywords :
Auger electron spectra; aluminium alloys; doping profiles; ion implantation; magnesium alloys; texture; 200 keV; Al rich alloy; AlMg:N; AlN; N ion implantation; c-axis preferred orientation; nitrogen depth profile; wurtzite type hcp AlN structure; Aluminum alloys; Ion accelerators; Ion beams; Ion implantation; Materials science and technology; Microwave devices; Nitrogen; Plasma temperature; Proton accelerators; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
Type :
conf
DOI :
10.1109/.2000.924273
Filename :
924273
Link To Document :
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