3115978

A 4 Mb Low-temperature DRAM

Henkels, W.H. ; Wen, D.S. ; Mohler, R.L. ; Franch, R.L. ; Bucelot, T.J. ; Long, C.W. ; Bracchitta, J.A. ; Cote, W.J. ; Bronner, G.B. ; Taur, Y. ; Dennard, R.H.

IBM T. J. Watson Research Center

1991

13-15 Feb. 1991

30

31

CMOS technology; Circuit noise; Cryogenics; Delay; Integrated circuit interconnections; MOS devices; Random access memory; Semiconductor device measurement; Temperature; Time measurement;

English

ieee

Solid-State Circuits Conference, 1991. Digest of Technical Papers. 38th ISSCC., 1991 IEEE International

San Francisco, CA, USA

0-87942-644-6

conf

10.1109/ISSCC.1991.689050

689050