DocumentCode :
3116009
Title :
Over 10W C-Ku band GaN MMIC non-uniform distributed power amplifier with broadband couplers
Author :
Masuda, Shin ; Akasegawa, A. ; Ohki, T. ; Makiyama, Kozo ; Okamoto, N. ; Imanishi, Kenji ; Kikkawa, Takamaro ; Shigematsu, Hisao
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1
Lastpage :
1
Abstract :
A 6-18 GHz monolithic microwave integrated circuit (MMIC) power amplifier (PA) was successfully developed using a quarter wavelength short stub and a monolithic broadband coupler for a non-uniform distributed power amplifier (NDPA) topology. This topology improved the output power at 18 GHz and attained a flat output power profile over 6-18 GHz. It also achieved filtering characteristics for both lower and higher cut-off frequencies. A fabricated MMIC PA with 0.25 μm GaN HEMTs delivered an output power of more than 10 W with average power added efficiency (PAE) of 18% over 6 to 18 GHz. To the best of our knowledge, this is the best combination of output power and bandwidth for any solid-state MMIC amplifier operating up to the full Ku-band.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; power amplifiers; wide band gap semiconductors; wideband amplifiers; GaN; MMIC non-uniform distributed power amplifier; broadband couplers; frequency 6 GHz to 18 GHz; monolithic microwave integrated circuit; power added efficiency; quarter wavelength short stub; size 0.25 mum; Broadband amplifiers; Circuit topology; Couplers; Distributed amplifiers; Gallium nitride; MMICs; Microwave amplifiers; Microwave integrated circuits; Power amplifiers; Power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5516208
Filename :
5516208
Link To Document :
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