Title :
10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2002 (Cat. No.02TH8629)
Keywords :
Ge-Si alloys; III-V semiconductors; gallium arsenide; integrated circuit design; integrated circuit modelling; integrated optics; integrated optoelectronics; microwave devices; microwave integrated circuits; optoelectronic devices; radiofrequency amplifiers; semiconductor device models; semiconductor growth; semiconductor materials; GaAs; GaAs devices/circuits; IC design; IC modeling; RF amplifiers; SiGe; SiGe devices/circuits; materials growth/characterization; microwave electron devices; optoelectronics; photonic devices; semiconductor device modeling;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on
Conference_Location :
Manchester, UK
Print_ISBN :
0-7803-7530-0
DOI :
10.1109/EDMO.2002.1174919
