Title :
Symbolically defined non-linear device modelling including self heating effects in GaAs DHBTs
Author :
Dharmasiri, C.N. ; Langlois, P.J. ; Rezazadeh, A.A.
Author_Institution :
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
Abstract :
A semi-physically defined non-linear model, which accounts for several important effects in HBTs is used in the large signal characterisation of self aligned planar InGaP/GaAs double heterojunction bipolar transistors (DHBTs). The model is designed to predict accurately the DC and RF characteristics based on the relevant device physics. In addition to self-heating, the model takes into account the charge storage effects, dependence of junction depletion capacitance, transit time delay and dependence of several important device parameters such as doping, epitaxial layer widths and temperature dependence of physical device parameters. Simulated and measured characteristics are compared to verify the model.
Keywords :
III-V semiconductors; doping profiles; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device measurement; semiconductor device models; thermal analysis; DC/RF characteristics; InGaP-GaAs; InGaP/GaAs double heterojunction bipolar transistors; charge storage effects; doping; epitaxial layer widths; junction depletion capacitance dependence; self aligned planar DHBT large signal characterisation; self heating effects; semi-physically defined nonlinear DHBT models; symbolically defined HBT modelling; transit time delay; Capacitance; Delay effects; Doping; Double heterojunction bipolar transistors; Gallium arsenide; Heating; Physics; Predictive models; Radio frequency; Semiconductor process modeling;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on
Print_ISBN :
0-7803-7530-0
DOI :
10.1109/EDMO.2002.1174928
