Title :
Small-signal analysis and direct S-parameter extraction
Author :
Wagner, S. ; Palankovski, V. ; Grasser, T. ; Schultheis, R. ; Selberherr, S.
Author_Institution :
Inst. fur Microelectron., Technische Univ. Wien, Austria
Abstract :
We present a comparison of several device parameters obtained by fully two-dimensional physical device simulation of several device parameters and measurements. Several features for direct extraction of either extrinsic or intrinsic (de-embedded) parameter sets from AC-simulation were implemented in the three-dimensional device simulator Minimos-NT. The scattering parameters (S-parameters) and other figures of merit of a complex heterostructure device have been obtained directly by using small-signal simulation. Thus, we use a combination of rigorous III-V group and IV group semiconductor materials modeling and the ability to simulate in the frequency domain. The results were verified both by analytical methods and by comparison with measurement data.
Keywords :
III-V semiconductors; IV-VI semiconductors; S-parameters; electronic engineering computing; frequency-domain analysis; heterojunction bipolar transistors; semiconductor device models; 2D physical device simulation; 3D device simulators; AC-simulation; HBT; III-V group semiconductor materials; IV group semiconductors; S-parameter extraction; de-embedded parameter sets; extrinsic/intrinsic parameter extraction; frequency domain simulation; heterostructure devices; scattering parameters; semiconductor device small-signal analysis; Admittance; Analytical models; Circuit simulation; Computational modeling; Cutoff frequency; Equations; Frequency domain analysis; Microelectronics; Scattering parameters; Technological innovation;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on
Print_ISBN :
0-7803-7530-0
DOI :
10.1109/EDMO.2002.1174929